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12–250V Trench N-MOSFET

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AP8N06SI,AP8N06SI MOS 管，60V 8.5A N 沟道 MOS,SOT89-3L 场效应管，低内阻 MOSFET, 电池保护开关管，永源微 AP8N06SI, 国产替代 AO6606

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锂电池保护板、充电宝、电动工具、小型 UPS、DC-DC 转换、LED 负载开关、3C 数码、智能家居低压电源回路

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AP8N06SI，AO6606、HC070N06LS、ZXMS6005DN8、SMF0608、AP4N06SI

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49.4pF（VDS=25V，f=1MHz 典型值）

Coss(pF): Unlimited

58.5pF（VDS=25V，f=1MHz 典型值）

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1148pF（VDS=25V，f=1MHz 典型值）

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Qgs(nC): Unlimited

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1.0V~2.5V，最低 4.5V 稳定驱动

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28mΩ@VGS=10V；

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25℃连续漏极电流 ID：8.5A；70℃降额 5.8A，脉冲峰值 14.6A

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60V（最小击穿 60V，典型 65V）

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3000 颗 / 13 寸防潮编带卷盘

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沟槽型垂直 MOS 工艺

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N 沟道增强型沟槽 MOSFET

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SOT89-3L 贴片

Selected Conditions:锂电池保护板、充电宝、电动工具、小型 UPS、DC-DC 转换、LED 负载开关、3C 数码、智能家居低压电源回路[ All Found Records1 ]

12–250V Trench N-MOSFET

	Picture	Model	Brand	Price	Stock	Delivery	封装	Operate
	Enlarge	AP8N06SI	APM	No Price	150000	正常出货	SOT89-3L

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