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 12–250V Trench N-MOSFETFilter

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Brand : Unlimited

APM

Catalog: Unlimited

12–250V Trench N-MOSFET

Product Keyword: Unlimited

N-MOS,APM MPS,台湾永源微，N+P沟道MOS,100V N+P-沟道MOS，开关MOS，N+P-MOS,N+P场效应管，N+P双MOS管AP8N06SI,AP8N06SI MOS 管，60V 8.5A N 沟道 MOS,SOT89-3L 场效应管，低内阻 MOSFET, 电池保护开关管，永源微 AP8N06SI, 国产替代 AO6606AP5N10SI,APM MOSFET,100V N 沟道 MOS,SOT89,4.5V 低压驱动，锂电保护开关管，快充功率管

Typical application scheme: Unlimited

美容雾化,小信号开关MOS,蓄电池保护, Load switch 负载开关,UPS●蓄电池保护 ●负载开关 ●不间断电源锂电池保护板、充电宝、电动工具、小型 UPS、DC-DC 转换、LED 负载开关、3C 数码、智能家居低压电源回路锂电池保护板、手机快充、无线充电、小型 DC-DC 开关电源、小家电低压控制电路

Alternative model: Unlimited

AP8N06SI，AO6606、HC070N06LS、ZXMS6005DN8、SMF0608、AP4N06SIAP5N10SI、STD5N10、FDN5N10、SM5N10、YJ100N053N10，

Crss(pF): Unlimited

Crss=23pF,3249.4pF（VDS=25V，f=1MHz 典型值）

Coss(pF): Unlimited

Coss=41pF,4658.5pF（VDS=25V，f=1MHz 典型值）

Ciss(pF): Unlimited

Ciss=711pF,6771148pF（VDS=25V，f=1MHz 典型值）

Qgd(nC): Unlimited

Qgd=2.4nC,4.35.3nC

Qgs(nC): Unlimited

Qgs=2.2nC,N沟道：Qgs=1.4nC,P沟道：Qgs=3.5nC,3.7nC4.2

Qg(nC): Unlimited

Qg=13.6nC,N沟道：Qg=7.6nC,P沟道：Qg=20nC,20.3nC25.5

Vgs(th)（V）: Unlimited

Vgs(th).Min.=1.0V,Vgs(th).Typ=1.5V,Vgs(th).Max.=2.5V,N沟道：Vgs(th)=3.0V,P沟道：Vgs(th)=-3.0V,1.0V~2.5V，最低 4.5V 稳定驱动1.6V（典型值）

Rdson @4.5V(mΩ): Unlimited

Rdson Max.@4.5V=320mΩ,N沟道：RDS(ON) < 300mΩ @ VGS=4.5V；P沟道：RDS(ON) < 230mΩ @ VGS=4.533mΩ@VGS=4.5V95mΩ

Rdson @10V(mΩ): Unlimited

Rdson Max.@10V=310mΩ,N沟道：RDS(ON) < 75mΩ @ VGS=10V；P沟道：RDS(ON) < 210mΩ @ VGS=10V，28mΩ@VGS=10V；88mΩ

ESD HBM (KV): Unlimited

无静电保护，N沟道：FOM=0.57Ω.nC,P沟道：FOM=4.2Ω.nC568.4 Ω·nC2244Ω.nC

VGS (±V): Unlimited

VGS=±20,VGS=±20，±20V±20V

ID（A）: Unlimited

ID =2.8 A,N沟道：ID =8A，P沟道： ID =-6.5A ，5A25℃连续漏极电流 ID：8.5A；70℃降额 5.8A，脉冲峰值 14.6A

VDS(V): Unlimited

VDS = 100V,VDS = 100V,60V（最小击穿 60V，典型 65V）100V

MOQ（Pcs）: Unlimited

3000PCS,3000 颗 / 13 寸防潮编带卷盘3000PCS5000PCS,

Technology: Unlimited

沟槽工艺Trench N-MOS,AP8G06NF采用先进的沟槽技术 以提供优异的RDS（ON）、低栅极电荷和 栅极电压低至4.5V时的操作。沟槽型垂直 MOS 工艺先进沟槽功率 MOS 工艺

Polarity Configuration: Unlimited

N-MOS,N+P-沟道MOS，N+P双MOSN 沟道N 沟道 (N-Channel)

Channel Mode: Unlimited

Trench沟槽工艺N+P-MOS，N 沟道增强型沟槽 MOSFETTrench 沟槽100V N沟道增强型MOSFET,

Package: Unlimited

PDFN5*6-8L，SOT89-3L 贴片SOT89-3L
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 12–250V Trench N-MOSFET

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AP5N10SI
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AP5N10SIAPM
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120000正常出货-
AP8N06SI
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AP8N06SIAPM
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15000正常出货-
AP3N10BI
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AP3N10BIAPM
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0正常出货-
AP5G10NF
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AP5G10NFAPM
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0正在投产-
AP15G10GD
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AP15G10GDAPM
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0正常出货-
AP5G10S
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AP5G10SAPM
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0正常出货-
AP20G06GD
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AP20G06GDAPM
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0正常出货-
AP10G06NF
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AP10G06NFAPM
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0正常出货-
AP10G06S
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AP10G06SAPM
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0正常出货-
AP8G06S
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AP8G06SAPM
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0正常出货-
AP4G06LI
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AP4G06LIAPM
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0正常出货-
AP40G04NF
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AP40G04NFAPM
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0正常出货-
AP25G04GD
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AP25G04GDAPM
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0正常出货-
AP20G04NF
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AP20G04NFAPM
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0正常出货-
AP20G04GD
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AP20G04GDAPM
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0正常出货-
AP20G04S
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AP20G04SAPM
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0更新版本中-
AP15G04NF
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AP15G04NFAPM
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0正常出货-
AP15G04S
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AP15G04SAPM
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0正常出货-
AP10G04DF
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AP10G04DFAPM
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0正常出货-
AP10G04S
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AP10G04SAPM
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0正常出货-
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