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 Common MOSFETs Filter

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Brand : Unlimited

APM

Catalog: Unlimited

Common MOSFETs

Product Keyword: Unlimited

N-MOS,APM MPS,台湾永源微，N+P沟道MOS,100V N+P-沟道MOS，开关MOS，N+P-MOS,N+P场效应管，N+P双MOS管

Typical application scheme: Unlimited

美容雾化,小信号开关MOS,蓄电池保护, Load switch 负载开关,UPS●蓄电池保护 ●负载开关 ●不间断电源

Alternative model: Unlimited

3N10，

Crss(pF): Unlimited

Crss=23pF,

Coss(pF): Unlimited

Coss=41pF,

Ciss(pF): Unlimited

Ciss=711pF,

Qgd(nC): Unlimited

Qgd=2.4nC,

Qgs(nC): Unlimited

Qgs=2.2nC,N沟道：Qgs=1.4nC,P沟道：Qgs=3.5nC,

Qg(nC): Unlimited

Qg=13.6nC,N沟道：Qg=7.6nC,P沟道：Qg=20nC,

Vgs(th)（V）: Unlimited

Vgs(th).Min.=1.0V,Vgs(th).Typ=1.5V,Vgs(th).Max.=2.5V,N沟道：Vgs(th)=3.0V,P沟道：Vgs(th)=-3.0V,

Rdson @4.5V(mΩ): Unlimited

Rdson Max.@4.5V=320mΩ,N沟道：RDS(ON) < 300mΩ @ VGS=4.5V；P沟道：RDS(ON) < 230mΩ @ VGS=4.5

Rdson @10V(mΩ): Unlimited

Rdson Max.@10V=310mΩ,N沟道：RDS(ON) < 75mΩ @ VGS=10V；P沟道：RDS(ON) < 210mΩ @ VGS=10V，

ESD HBM (KV): Unlimited

无静电保护，N沟道：FOM=0.57Ω.nC,P沟道：FOM=4.2Ω.nC

VGS (±V): Unlimited

VGS=±20,VGS=±20，

ID（A）: Unlimited

ID =2.8 A,N沟道：ID =8A，P沟道： ID =-6.5A ，

VDS(V): Unlimited

VDS = 100V,VDS = 100V,

MOQ（Pcs）: Unlimited

3000PCS,5000PCS,

Technology: Unlimited

沟槽工艺Trench N-MOS,AP8G06NF采用先进的沟槽技术 以提供优异的RDS（ON）、低栅极电荷和 栅极电压低至4.5V时的操作。

Polarity Configuration: Unlimited

N-MOS,N+P-沟道MOS，N+P双MOS

Channel Mode: Unlimited

Trench沟槽工艺N+P-MOS，100V N沟道增强型MOSFET,
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 Common MOSFETs